Datasheet SPI08N50C3 - Infineon MOSFET, N, 500 V, I2-PAK

Detailed Description

Manufacturer: Infineon

Description: MOSFET, N, 500 V, I2-PAK

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Docket:
SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance
P-TO220-3-31
1 2 3
VDS @ Tjmax RDS(on) ID

Specifications:

• Continuous Drain Current Id: 7.6 A
• Drain Source Voltage Vds: 500 V
• Mounting Type: Through Hole
• On Resistance Rds(on): 600 MOhm
• Package / Case: I2-PAK
• Power Dissipation Pd: 83 W
• Pulse Current Idm: 22.8 A
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: I2-PAK
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 560 V
• Voltage Vds: 500 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Fischer Elektronik - SK 145/37,5 STS-220
• Fischer Elektronik - SK 409/25,4 STS
• Fischer Elektronik - SK 409/50,8 STS
• Fischer Elektronik - WLK 5