Datasheet IRF6646TR1 - International Rectifier MOSFET, N, DIRECTFET, MN

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MN

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Docket:
PD - 96995E
IRF6646
DirectFET Power MOSFET
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RoHS compliant containing no lead or bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses Compatible with existing Surface Mount Techniques

Simulation Model

Specifications:

• Capacitance Ciss Typ: 2060 pF
• Continuous Drain Current Id: 12 A
• Current Id Max: 12 A
• Drain Source Voltage Vds: 80 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• Number of Pins: 7
• On Resistance Rds(on): 7.6 MOhm
• Operating Temperature Range: -40°C to +150°C
• Package / Case: MN
• Power Dissipation Pd: 2.8 W
• Pulse Current Idm: 96 A
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Typ: 36 ns
• SMD Marking: 6646
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4.9 V
• Transistor Case Style: DirectFET MN
• Transistor Polarity: N Channel
• Voltage Vds Typ: 80 V
• Voltage Vds: 80 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes