Datasheet IRF6668TR1PBF - International Rectifier MOSFET, N, DIRECTFET, MZ

International Rectifier IRF6668TR1PBF

Part Number: IRF6668TR1PBF

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MZ

Docket:
PD - 97232A
IRF6668PbF IRF6668TRPbF
l l l l l l l l l l
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET

Simulation Model

Specifications:

Avalanche Single Pulse Energy Eas: 24mJ
Base Number: 6668
Cont Current Id @ 70В°C: 44 A
Continuous Drain Current Id: 55 A
Current Id Max: 44 A
Drain Source Voltage Vds: 80 V
Fall Time tf: 23 ns
Junction Temperature Tj Max: 150°C
Junction Temperature Tj Min: -40°C
Mounting Type: SMD
Number of Pins: 5
On Resistance Rds(on): 15 MOhm
Package / Case: MZ
Power Dissipation Pd: 2.8 mW
Pulse Current Idm: 170 A
Rds(on) Test Voltage Vgs: 10 V
Rise Time: 13 ns
SVHC: No SVHC (15-Dec-2010)
Storage Temperature Max: 150°C
Storage Temperature Min: -40°C
Threshold Voltage Vgs Typ: 4 V
Transistor Polarity: N Channel
Voltage Vds Typ: 80 V
Voltage Vds: 80 V
Voltage Vgs Max: 4 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes