Datasheet IRF7807APBF - International Rectifier MOSFET, N, SO-8

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, SO-8

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Docket:
PD ­ 91747C
IRF7807/IRF7807A
HEXFET® Chip-Set for DC-DC Converters
· · · · N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses
S S S G

Specifications:

• Continuous Drain Current Id: 8.3 A
• Current Id Max: 8.3 A
• Drain Source Voltage Vds: 30 V
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 25 MOhm
• Package / Case: SOIC
• Power Dissipation Pd: 2.5 W
• Pulse Current Idm: 66 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Row Pitch: 6.3 mm
• SMD Marking: F7807A
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

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