Datasheet IRFH5110TR2PBF - International Rectifier MOSFET, N CH, 100 V, 11 A, PQFN56

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N CH, 100 V, 11 A, PQFN56

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Docket:
PD -96294
IRFH5110PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)

Specifications:

• Continuous Drain Current Id: 11 A
• Current Id Max: 63 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 8
• On Resistance Rds(on): 10.3 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 114 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: QFN
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V
• RoHS: Yes
• SVHC: No SVHC (18-Jun-2012)