Datasheet IRLMS1902PBF - International Rectifier MOSFET, N, LOGIC, MICRO-6

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, LOGIC, MICRO-6

Download Data Sheet

Docket:
PD - 91540C
IRLMS1902
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET

Specifications:

• Capacitance Ciss Typ: 300 pF
• Charge Qrr @ Tj = 25В°C Typ: 37nC
• Continuous Drain Current Id: 3.2 A
• Current Id Max: 3.2 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 20 V
• External Depth: 3.00 mm
• External Length / Height: 1.45 mm
• External Width: 3.00 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• N-channel Gate Charge: 4.7nC
• Number of Pins: 6
• On Resistance Rds(on): 100 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: Micro6
• Power Dissipation Pd: 1.7 W
• Pulse Current Idm: 18 A
• Rate of Voltage Change dv / dt: 5V/ns
• Rds(on) Test Voltage Vgs: 4.5 V
• Reverse Recovery Time trr Typ: 40 ns
• SMD Marking: 2 A
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 700 mV
• Transistor Case Style: MicroSOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vds: 20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Min: 700 mV

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Panasonic - EYGA121807A