Datasheet IRF6619TR1 - International Rectifier MOSFET, N, DIRECTFET, MX

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MX

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Docket:
PD - 96917B
DirectFET Power MOSFET
Typical values (unless otherwise specified)
l l l l l l l l
IRF6619

Simulation Model

Specifications:

• Capacitance Ciss Typ: 5040 pF
• Continuous Drain Current Id: 24 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• On Resistance Rds(on): 1.65 MOhm
• Package / Case: MX
• Power Dissipation Pd: 2.8 W
• Pulse Current Idm: 240 A
• Reverse Recovery Time trr Typ: 29 ns
• SMD Marking: 6619
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.45 V
• Transistor Case Style: MX
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vds: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• LICEFA - V11-7