Datasheet IRF6623TR1 - International Rectifier MOSFET, N, DIRECTFET, ST
Part Number: IRF6623TR1
Detailed Description
Manufacturer: International Rectifier
Description: MOSFET, N, DIRECTFET, ST
Docket:
PD - 95824C
IRF6623
l l l l l l l
Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Profile (<0.7 mm) Dual Sided Cooling Compatible Compatible with Existing Surface Mount Techniques
HEXFET® Power MOSFET
Specifications:
- Capacitance Ciss Typ: 1360 pF
- Charge Qrr @ Tj = 25В°C Typ: 12nC
- Continuous Drain Current Id: 55 A
- Current Temperature: 25°C
- Drain Source Voltage Vds: 20 V
- External Depth: 4.85 mm
- External Length / Height: 0.7 mm
- External Width: 3.95 mm
- Full Power Rating Temperature: 25°C
- IC Package (Case style): ST
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -40°C
- Mounting Type: SMD
- Number of Pins: 7
- Number of Transistors: 1
- On Resistance Rds(on): 5.7 MOhm
- On State Resistance Max: 5.7 MOhm
- Package / Case: ST
- Power Dissipation Pd: 2.1 W
- Pulse Current Idm: 120 A
- Reverse Recovery Time trr Typ: 20 ns
- SMD Marking: 6623
- SVHC: No SVHC (15-Dec-2010)
- Threshold Voltage Vgs Typ: 2.2 V
- Transistor Case Style: ST
- Transistor Polarity: N Channel
- Voltage Vds Typ: 20 V
- Voltage Vds: 20 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
- Voltage Vgs th Max: 2 V
- Voltage Vgs th Min: 1.3 V
RoHS: Yes
Accessories:
- International Rectifier - IRF6623TR1PBF
- LICEFA - V11-7