Datasheet IRF6678TR1 - International Rectifier MOSFET, N, DIRECTFET, MX

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, DIRECTFET, MX

Download Data Sheet

Docket:
PD - 96979F
IRF6678
DirectFET Power MOSFET
l l l l l l l l l
RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) Low Profile (<0.7 mm) 30V max ±20V max 1.7m@ 10V 2.3m@ 4.5V Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ultra Low Package Inductance 43nC 15nC 4.0nC 46nC 28nC 1.8V Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for for SyncFET Socket of Sync.

Buck Converter Low Conduction and Switching Losses Compatible with Existing Surface Mount Techniques MX

Simulation Model

Specifications:

• Capacitance Ciss Typ: 5640 pF
• Continuous Drain Current Id: 30 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -40°C
• Mounting Type: SMD
• On Resistance Rds(on): 1.7 MOhm
• Package / Case: MX
• Power Dissipation Pd: 2.8 W
• Pulse Current Idm: 240 A
• Reverse Recovery Time trr Typ: 43 ns
• SMD Marking: 6678
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 2.25 V
• Transistor Case Style: MX
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7