Datasheet IRFSL3607PBF - International Rectifier MOSFET, N, TO-262

Detailed Description

Manufacturer: International Rectifier

Description: MOSFET, N, TO-262

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Docket:
PD - 97125
IRF1018EPbF IRF1018ESPbF IRF1018ESLPbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
HEXFET® Power MOSFET
D

Specifications:

• Continuous Drain Current Id: 80 A
• Current Id Max: 80 A
• Drain Source Voltage Vds: 75 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 7.34 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-262
• Power Dissipation Pd: 140 W
• Pulse Current Idm: 310 A
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-262
• Transistor Polarity: N Channel
• Voltage Vds Typ: 75 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes