Datasheet IXFK30N100Q2 - IXYS MOSFET, N, TO-264

IXYS IXFK30N100Q2

Part Number: IXFK30N100Q2

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-264

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Docket:
HiPerFETTM Power MOSFETs
Q-Class
IXFK 30N100Q2 IXFX 30N100Q2
VDSS = 1000 V = 30 A ID25 RDS(on) = 0.40 trr 300 ns
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr

Specifications:

  • Avalanche Single Pulse Energy Eas: 4J
  • Continuous Drain Current Id: 30 A
  • Current Id Max: 30 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 1 kV
  • Full Power Rating Temperature: 25°C
  • Junction Temperature Tj Max: 150°C
  • Junction Temperature Tj Min: -55°C
  • Mounting Type: Through Hole
  • N-channel Gate Charge: 186nC
  • Number of Pins: 3
  • Number of Transistors: 1
  • On State Resistance Max: 400 MOhm
  • On State Resistance: 400 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-264
  • Power Dissipation Pd: 735 W
  • Pulse Current Idm: 120 A
  • Rate of Voltage Change dv / dt: 20V/ns
  • Rds(on) Test Voltage Vgs: 10 V
  • Repetitive Avalanche Energy Max: 60mJ
  • Reverse Recovery Time trr Typ: 250 ns
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-264
  • Transistor Polarity: N Channel
  • Transistor Type: MOSFET
  • Voltage Vds Typ: 1 kV
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 5 V
  • Weight: 0.00001kg

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

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