Datasheet IXFK32N80P - IXYS MOSFET, N, TO-264

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-264

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Docket:
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 32N80P IXFX 32N80P
VDSS ID25
RDS(on) trr

Specifications:

• Capacitance Ciss Typ: 8800 pF
• Continuous Drain Current Id: 32 A
• Current Id Max: 32 A
• Drain Source Voltage Vds: 800 V
• Junction to Case Thermal Resistance A: 0.15°C/W
• Mounting Type: Through Hole
• N-channel Gate Charge: 150nC
• Number of Pins: 3
• On State Resistance: 270 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-264
• Power Dissipation Pd: 830 W
• Rds(on) Test Voltage Vgs: 10 V
• Reverse Recovery Time trr Max: 250 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-264
• Transistor Polarity: N Channel
• Voltage Vds Typ: 800 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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