Datasheet IXFN26N90 - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs IXFN 26N90 Single Die MOSFET
IXFN 25N90 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
G D
VDSS 900 V 900 V
ID (cont) 26 A 25 A

Specifications:

• Avalanche Single Pulse Energy Eas: 3J
• Continuous Drain Current Id: 26 A
• Current Id Max: 26 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 900 V
• Full Power Rating Temperature: 25°C
• Isolation Voltage: 2.5 kV
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 300 MOhm
• On State Resistance: 300 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 600 W
• Pulse Current Idm: 104 A
• Rate of Voltage Change dv / dt: 5 V/µs
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 64mJ
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 900 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 5 V
• Weight: 0.044kg

RoHS: Yes

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• Panasonic - EYGA121807A
• SCHRODER - 20900