Datasheet IXFN44N80 - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
HiPerFETTM Power MOSFETs Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 TC = 25°C
IXFN 44N80
VDSS ID25

Specifications:

• Avalanche Single Pulse Energy Eas: 4J
• Continuous Drain Current Id: 44 A
• Current Id Max: 44 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 800 V
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: Screw
• N-channel Gate Charge: 380nC
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 165 MOhm
• On State Resistance: 165 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 700 W
• Pulse Current Idm: 800 A
• Rate of Voltage Change dv / dt: 5V/ns
• Rds(on) Test Voltage Vgs: 10 V
• Repetitive Avalanche Energy Max: 64mJ
• Reverse Recovery Time trr Typ: 250 ns
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Transistor Type: MOSFET
• Voltage Vds Typ: 800 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V
• Weight: 0.000036kg

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900