Datasheet IXFT140N10P - IXYS MOSFET, N, TO-268

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-268

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Docket:
PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Mounting torque TO-247 TO-268 (TO-247) Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 M Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150° C, RG = 4 TC = 25° C Maximum Ratings 100 100 ±20 ±30 140 75 300 60 80 2.5 10 600 -55 ...

+175 175 -55 ... +150 300 260 V V V V A A A A mJ J V/ns W °C °C °C °C °C
VDSS ID25
RDS(on) trr

Specifications:

• Capacitance Ciss Typ: 4700 pF
• Continuous Drain Current Id: 140 A
• Current Id Max: 140 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 0.25°C/W
• Mounting Type: SMD
• N-channel Gate Charge: 155nC
• Number of Pins: 3
• On State Resistance: 11 MOhm
• Operating Temperature Range: -55°C to +175°C
• Package / Case: TO-268
• Power Dissipation Pd: 600 W
• Rds(on) Test Voltage Vgs: 15 V
• Reverse Recovery Time trr Max: 150 ns
• Threshold Voltage Vgs Typ: 5 V
• Transistor Case Style: TO-268
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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