Datasheet IXFT26N60P - IXYS MOSFET, N, TO-268

IXYS IXFT26N60P

Part Number: IXFT26N60P

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, TO-268

Docket:
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS
VDSS = 600 V ID25 = 26 A RDS(on) 270 m trr 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt

Specifications:

Capacitance Ciss Typ: 4150 pF
Continuous Drain Current Id: 26 A
Current Id Max: 26 A
Drain Source Voltage Vds: 600 V
Junction to Case Thermal Resistance A: 0.27°C/W
Mounting Type: SMD
N-channel Gate Charge: 72nC
Number of Pins: 3
On State Resistance: 270 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-268
Power Dissipation Pd: 460 W
Rds(on) Test Voltage Vgs: 10 V
Reverse Recovery Time trr Max: 200 ns
Threshold Voltage Vgs Typ: 5 V
Transistor Case Style: TO-268
Transistor Polarity: N Channel
Voltage Vds Typ: 600 V
Voltage Vgs Max: 30 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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