Datasheet IXTN21N100 - IXYS MOSFET, N, SOT-227B

Detailed Description

Manufacturer: IXYS

Description: MOSFET, N, SOT-227B

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Docket:
High Voltage MegaMOSTMFETs
IXTK 21N100 IXTN 21N100
VDSS = 1000 V = 21 A ID25 RDS(on) = 0.55
N-Channel, Enhancement Mode
TO-264 AA (IXTK) Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s 300 0.9/6 10 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C Maximum Ratings IXTK IXTN 1000 1000 ±20 ±30 21 84 500 1000 1000 ±20 ±30 21 84 520 150 -55 ...

+150 2500 3000 V V V V A A W °C °C °C °C V~ V~

Specifications:

• Continuous Drain Current Id: 21 A
• Current Id Max: 21 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 1 kV
• Full Power Rating Temperature: 25°C
• Mounting Type: Screw
• Number of Pins: 3
• Number of Transistors: 1
• On State Resistance Max: 550 MOhm
• On State Resistance: 550 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 520 W
• Pulse Current Idm: 84 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 1 kV
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4.5 V

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900