Datasheet BSH103 - NXP MOSFET, N, SOT-23
Part Number: BSH103
Detailed Description
Manufacturer: NXP
Description: MOSFET, N, SOT-23
Docket:
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D088
BSH103 N-channel enhancement mode MOS transistor
Specifications:
- Continuous Drain Current Id: 850 mA
- Current Id Max: 920 mA
- Current Temperature: 25°C
- Drain Source Voltage Vds: 30 V
- Mounting Type: SMD
- Number of Pins: 3
- Number of Transistors: 1
- On State Resistance: 500 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-23
- Power Dissipation Pd: 500 mW
- Power Dissipation Ptot Max: 500 mW
- Pulse Current Idm: 3.4 A
- Rds(on) Test Voltage Vgs: 4.5 V
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: 400 mV
- Transistor Case Style: SOT-23
- Transistor Polarity: N Channel
- Voltage Vds Typ: 30 V
- Voltage Vgs Max: 8 V
- Voltage Vgs Rds on Measurement: 2.5 V
RoHS: Yes