Datasheet BUK6207-55C - NXP MOSFET, N CH, 55 V, 90 A, SOT428

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 55 V, 90 A, SOT428

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Docket:
BUK6207-55C
N-channel TrenchMOS intermediate level FET
Rev.

2 -- 17 September 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Continuous Drain Current Id: 90 A
• Current Id Max: 90 A
• Drain Source Voltage Vds: 55 V
• Number of Pins: 3
• On Resistance Rds(on): 6.6 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation: 158 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 2.3 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 16 V

RoHS: Y-Ex

Other Names:

BUK620755C, BUK6207 55C