Datasheet BUK6E2R3-40C - NXP MOSFET, N CH, 40 V, 120 A, SOT226

Detailed Description

Manufacturer: NXP

Description: MOSFET, N CH, 40 V, 120 A, SOT226

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Docket:
BUK6E2R3-40C
N-channel TrenchMOS intermediate level FET
Rev.

1 -- 18 August 2010 Product data sheet
1. Product profile
1.1 General description

Specifications:

• Current Id Max: 120 A
• Drain Source Voltage Vds: 40 V
• Number of Pins: 3
• On State Resistance: 2 MOhm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 306 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: I2-PAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 16 V

RoHS: Y-Ex

Accessories:

• Fischer Elektronik - WLK 5
• VISHAY SILICONIX - SI7938DP-T1-GE3

Other Names:

BUK6E2R340C, BUK6E2R3 40C