Datasheet PSMN009-100P - NXP MOSFET, N, TO-220
Part Number: PSMN009-100P
Detailed Description
Manufacturer: NXP
Description: MOSFET, N, TO-220
Docket:
PSMN009-100P/100B
N-channel enhancement mode field-effect transistor
Rev.
01 -- 29 April 2002 Product data
1. Description
N-channel logic level field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PSMN009-100P in SOT78 (TO-220AB) PSMN009-100B in SOT404 (D2-PAK).
Specifications:
- Continuous Drain Current Id: 75 A
- Current Id Max: 75 A
- Drain Source Voltage Vds: 100 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On State Resistance: 7.5 MOhm
- Operating Temperature Range: -55°C to +175°C
- Package / Case: TO-220AB
- Power Dissipation Pd: 230 W
- Pulse Current Idm: 400 A
- Rds(on) Test Voltage Vgs: 10 V
- SMD Marking: PSMN009-100P
- SVHC: No SVHC (18-Jun-2010)
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-220AB
- Transistor Polarity: N Channel
- Voltage Vds Typ: 100 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
Accessories:
- Fischer Elektronik - SK 145/37,5 STS-220
- Fischer Elektronik - SK 409/25,4 STS
- Fischer Elektronik - SK 409/50,8 STS
- Fischer Elektronik - WLK 5
Other Names:
PSMN009100P, PSMN009 100P