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Datasheet BSH202,215 - NXP MOSFET P-CH 30 V 520 mA SOT23

NXP BSH202,215

Part Number: BSH202,215

Detailed Description

Manufacturer: NXP

Description: MOSFET P-CH 30 V 520 mA SOT23

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Docket:
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
FEATURES
· Low threshold voltage · Fast switching · Logic level compatible · Subminiature surface mount package

Specifications:

  • Continuous Drain Current Id: -280 mA
  • Current Id Max: -520 mA
  • Drain Source Voltage Vds: -30 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On State Resistance: 900 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation Pd: 417 mW
  • Rds(on) Test Voltage Vgs: -10 V
  • SVHC: No SVHC (18-Jun-2010)
  • Threshold Voltage Vgs Typ: -1.9 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: P Channel
  • Transistor Type: Enhancement
  • Voltage Vds Typ: -30 V
  • Voltage Vgs Max: -1.9 V
  • Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Other Names:

BSH202215, BSH202 215

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