Datasheet BSH202,215 - NXP MOSFET P-CH 30 V 520 mA SOT23

Detailed Description

Manufacturer: NXP

Description: MOSFET P-CH 30 V 520 mA SOT23

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Docket:
Philips Semiconductors
Product specification
P-channel enhancement mode MOS transistor
FEATURES
· Low threshold voltage · Fast switching · Logic level compatible · Subminiature surface mount package

Specifications:

• Continuous Drain Current Id: -280 mA
• Current Id Max: -520 mA
• Drain Source Voltage Vds: -30 V
• Mounting Type: SMD
• Number of Pins: 3
• On State Resistance: 900 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 417 mW
• Rds(on) Test Voltage Vgs: -10 V
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: -1.9 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -1.9 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes

Other Names:

BSH202215, BSH202 215