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Datasheet NIF62514T1G - ON Semiconductor SMART MOSFET, N, 42 V, 1.73 W, SOT-223

ON Semiconductor NIF62514T1G

Part Number: NIF62514T1G

Detailed Description

Manufacturer: ON Semiconductor

Description: SMART MOSFET, N, 42 V, 1.73 W, SOT-223

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Preferred Device
Self-Protected FET with Temperature and Current Limit
HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp.


  • Avalanche Single Pulse Energy Eas: 300mJ
  • Clamping Voltage Vc Max: 40 V
  • Continuous Drain Current Id: 6 A
  • Current Id Max: 6 A
  • Drain Source Voltage Vds: 40 V
  • Mounting Type: SMD
  • Number of Pins: 3
  • On State Resistance: 100 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-223
  • Pin Configuration: 1(G), 2(D), 3(S), 4-TAB(D)
  • Power Dissipation Pd: 1.1 W
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Shutdown Temperature: 175°C
  • Threshold Voltage Vgs Typ: 1.7 V
  • Transistor Case Style: SOT-223
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 40 V
  • Voltage Vgs Max: 16 V DC
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 2 V
  • Voltage Vgs th Min: 1 V

RoHS: Yes


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