Datasheet RJP020N06T100 - Rohm MOSFET, N CH, 60 V, 2 A, SOT-89

Detailed Description

Manufacturer: Rohm

Description: MOSFET, N CH, 60 V, 2 A, SOT-89

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Docket:
RJP020N06
Transistors
2.5V Drive Nch MOS FET
RJP020N06
Structure Silicon N-channel MOS FET External dimensions (Unit : mm)

Specifications:

• Current Id Max: 2 A
• Drain Source Voltage Vds: 60 V
• Number of Pins: 3
• On State Resistance: 165 MOhm
• Power Dissipation Pd: 500 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SOT-89
• Transistor Polarity: N Channel
• Voltage Vgs Max: 12 V

RoHS: Yes

Accessories:

• VISHAY SILICONIX - SI9948AEY