Datasheet MTD6N15T4G - ON Semiconductor N CHANNEL MOSFET, 150 V, 6 A, D-PAK

Detailed Description

Manufacturer: ON Semiconductor

Description: N CHANNEL MOSFET, 150 V, 6 A, D-PAK

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Docket:
MTD6N15 Power Field Effect Transistor DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features
V(BR)DSS 150 V

Simulation Model

Specifications:

• Continuous Drain Current Id: 6 A
• Drain Source Voltage Vds: 150 V
• On Resistance Rds(on): 300 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4.5 V
• Transistor Polarity: N Channel

RoHS: Y-Ex