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Datasheet SI1032R-T1-GE3 - Vishay MOSFET ESD, N CH, 20 V, 0.14 A, SC89

Vishay SI1032R-T1-GE3

Part Number: SI1032R-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET ESD, N CH, 20 V, 0.14 A, SC89

data sheetDownload Data Sheet

Docket:
Si1032R/X
Vishay Siliconix
N-Channel 1.5 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 5 at VGS = 4.5 V 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50

Specifications:

  • Current Id Max: 140 mA
  • Drain Source Voltage Vds: 20 V
  • Number of Pins: 3
  • On State Resistance: 5 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 250 mW
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Transistor Case Style: SC-89
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 6 V

RoHS: Yes

Other Names:

SI1032RT1GE3, SI1032R T1 GE3

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