Datasheet SI4532CDY-T1-GE3 - Vishay MOSFET, NP-CH, 30 V, SO8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, NP-CH, 30 V, SO8

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Docket:
Si4532CDY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel 30 RDS(on) () 0.047 at VGS = 10 V 0.065 at VGS = 4.5 V 0.089 at VGS = - 10 V 0.140 at VGS = - 4.5 V ID (A)a 6.0 5.2 - 4.3 - 3.4 Qg (Typ.) 2.75

Specifications:

• Current Id Max: 6 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 38 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.78 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Other Names:

SI4532CDYT1GE3, SI4532CDY T1 GE3