Datasheet TPC6005(TE85L,F) - Toshiba MOSFET N CH 6 A 30 V TSOP6

Detailed Description

Manufacturer: Toshiba

Description: MOSFET N CH 6 A 30 V TSOP6

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Docket:
TPC6005
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6005
Notebook PC Applications Portable Equipment Applications
· · · · Low drain-source ON resistance: RDS (ON) = 21 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancementmode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm

Specifications:

• Continuous Drain Current Id: 6 A
• Current Id Max: 6 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 6
• On State Resistance: 28 MOhm
• Package / Case: VS-6
• Power Dissipation Pd: 2.2 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 1.2 V
• Transistor Case Style: TSOP
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

Other Names:

TPC6005(TE85LF), TPC6005(TE85L F)