Datasheet IRFU120PBF - Vishay MOSFET, N, 100 V, 7.7 A, I-PAK

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, 100 V, 7.7 A, I-PAK

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Docket:
IRFR120, IRFU120, SiHFR120, SiHFU120
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 16 4.4 7.7 Single

Specifications:

• Alternate Case Style: I-PAK
• Continuous Drain Current Id: 7.7 A
• Current Id Max: 7.7 A
• Drain Source Voltage Vds: 100 V
• Junction to Case Thermal Resistance A: 0 °C/W
• Mounting Type: Through Hole
• Number of Pins: 3
• On State Resistance: 270 MOhm
• On State resistance @ Vgs = 10V: 270 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: IPAK
• Power Dissipation Pd: 42 W
• Pulse Current Idm: 31 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: I-PAK
• Transistor Polarity: N Channel
• Turn Off Time: 14 ns
• Turn On Time: 27 ns
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

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