Datasheet SI2319CDS-T1-GE3 - Vishay MOSFET, P CH, 40 V, 4.4 A, DIODE, SOT23

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P CH, 40 V, 4.4 A, DIODE, SOT23

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Docket:
Si2319CDS
Vishay Siliconix
P-Channel 40 V (D-S) MOSFET
FEATURES
ID (A)a - 4.4 7 nC - 3.7 Qg (Typ.)

Specifications:

• Current Id Max: -3.1 A
• Drain Source Voltage Vds: -40 V
• Number of Pins: 3
• On State Resistance: 0.064 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 1.25 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vgs Max: -20 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL

Other Names:

SI2319CDST1GE3, SI2319CDS T1 GE3