Datasheet SUD09P10-195-GE3 - Vishay MOSFET, P CH, DIODE, 100 V, 8.8 A, TO-252

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P CH, DIODE, 100 V, 8.8 A, TO-252

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Docket:
SUD09P10-195
Vishay Siliconix
P-Channel 100 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 100 RDS(on) () 0.195 at VGS = - 10 V 0.210 at VGS = - 4.5 V ID (A) - 8.8 - 8.5 Qg (Typ.) 11.7

Specifications:

• Current Id Max: -8.8 A
• Drain Source Voltage Vds: -100 V
• Number of Pins: 2
• On State Resistance: 0.162 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 2.5 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: TO-252
• Transistor Polarity: P Channel
• Voltage Vgs Max: -20 V

RoHS: Yes

Accessories:

• Electrolube - SMA10SL

Other Names:

SUD09P10195GE3, SUD09P10 195 GE3