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Datasheet SI5435BDC-T1-GE3 - Vishay P CHANNEL MOSFET, -30 V, 5.9 A, 1206

Vishay SI5435BDC-T1-GE3

Part Number: SI5435BDC-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -30 V, 5.9 A, 1206

data sheetDownload Data Sheet

Docket:
Si5435BDC
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.045 at VGS = - 10 V 0.080 at VGS = - 4.5 V ID (A) - 5.9 - 4.4

Simulation ModelSimulation Model

Specifications:

  • Continuous Drain Current, Id: -5.9 A
  • Drain Source Voltage, Vds: -30 V
  • On Resistance, Rds(on): 0.08 Ohm
  • Rds(on) Test Voltage, Vgs: 8 V
  • Threshold Voltage, Vgs Typ: -3 V
  • Transistor Polarity: P Channel

RoHS: Yes

Other Names:

SI5435BDCT1GE3, SI5435BDC T1 GE3

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