Datasheet SI4559ADY-T1-E3 - Vishay MOSFET, N/P, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N/P, SO-8

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Docket:
Si4559ADY
Vishay Siliconix
N- and P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () 0.058 at VGS = 10 V 0.072 at VGS = 4.5 V 0.120 at VGS = - 10 V 0.150 at VGS = - 4.5 V ID (A)a Qg (Typ.) 5.3 4.7 - 3.9 - 3.5 6 nC 8 nC

Specifications:

• Cont Current Id N Channel: 5.3 A
• Cont Current Id P Channel: 3.9 A
• Current Id Max: 4.3 A
• Drain Source Voltage Vds: 60 V
• Junction Temperature Tj Min: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance @ Vgs = 10V N Channel: 58 MOhm
• On State Resistance @ Vgs = 10V P Channel: 120 MOhm
• On State Resistance @ Vgs = 4.5V N Channel: 72 MOhm
• On State Resistance @ Vgs = 4.5V P Channel: 150 MOhm
• Package / Case: SOIC-8
• Power Dissipation N Channel 2: 3.1 W
• Power Dissipation P Channel 2: 3.4 W
• Power Dissipation Pd: 2 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 3 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th N Channel 1 Min: 1 V
• Voltage Vgs th P Channel Max: 3 V
• Voltage Vgs th P Channel Min: 1 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Other Names:

SI4559ADYT1E3, SI4559ADY T1 E3