Datasheet SIB411DK-T1-GE3 - Vishay MOSFET, P, PPAK SC-75

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P, PPAK SC-75

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Docket:
SiB411DK
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 20 RDS(on) () 0.066 at VGS = - 4.5 V 0.094 at VGS = - 2.5 V 0.130 at VGS = - 1.8 V ID (A) - 9a - 9a -9

Specifications:

• Continuous Drain Current Id: 9 A
• Current Id Max: -9 A
• Drain Source Voltage Vds: -20 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 6
• On State Resistance: 66 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SC-75
• Power Dissipation Pd: 13 W
• Rds(on) Test Voltage Vgs: 8 V
• Rise Time: 40 ns
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: SC-75
• Transistor Polarity: P Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1 V
• Voltage Vgs th Min: 0.4 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Other Names:

SIB411DKT1GE3, SIB411DK T1 GE3