Datasheet SI2302CDS-T1-GE3 - Vishay MOSFET, N, SOT-23

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, SOT-23

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Docket:
Si2302CDS
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.057 at VGS = 4.5 V 0.075 at VGS = 2.5 V ID (A) 2.9 2.6 Qg (Typ.) 3.5

Specifications:

• Continuous Drain Current Id: 2.9 A
• Current Id Max: 2.9 A
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 57 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 710 mW
• Rds(on) Test Voltage Vgs: 8 V
• Rise Time: 7 ns
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 850 mV
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 850 mV
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 0.85 V
• Voltage Vgs th Min: 0.4 V

RoHS: Yes

Other Names:

SI2302CDST1GE3, SI2302CDS T1 GE3