Datasheet SI3442BDV-T1-GE3 - Vishay N CHANNEL MOSFET, 20 V, 4.2 A

Vishay SI3442BDV-T1-GE3

Part Number: SI3442BDV-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 20 V, 4.2 A

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Docket:
Si3442BDV
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) () 0.057 at VGS = 4.5 V 0.090 at VGS = 2.5 V ID (A) 4.2 3.4

Specifications:

  • Continuous Drain Current Id: 4.2 A
  • Drain Source Voltage Vds: 20 V
  • On Resistance Rds(on): 0.057 Ohm
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Threshold Voltage Vgs Typ: 1.8 V
  • Transistor Polarity: N Channel

RoHS: Yes

Other Names:

SI3442BDVT1GE3, SI3442BDV T1 GE3

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