Datasheet SIA850DJ-T1-GE3 - Vishay MOSFET, N CH, + DI, 190 V, 0.95 A, SC70PPAK
Part Number: SIA850DJ-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, N CH, + DI, 190 V, 0.95 A, SC70PPAK
Docket:
New Product
SiA850DJ
Vishay Siliconix
N-Channel 190-V (D-S) MOSFET with 190-V Diode
PRODUCT SUMMARY
Specifications:
- Current Id Max: 470 mA
- Drain Source Voltage Vds: 190 V
- Number of Pins: 6
- On State Resistance: 3 Ohm
- Operating Temperature Range: -55°C to +150°C
- Power Dissipation Pd: 1.9 W
- Rds(on) Test Voltage Vgs: 4.5 V
- Transistor Case Style: PowerPAK SC70
- Transistor Polarity: N Channel
- Voltage Vgs Max: 16 V
RoHS: Yes
Accessories:
- Analog Devices - ADP3623ARDZ-RL
- Electrolube - SMA10SL
Other Names:
SIA850DJT1GE3, SIA850DJ T1 GE3