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Datasheet SIA850DJ-T1-GE3 - Vishay MOSFET, N CH, + DI, 190 V, 0.95 A, SC70PPAK

Vishay SIA850DJ-T1-GE3

Part Number: SIA850DJ-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, + DI, 190 V, 0.95 A, SC70PPAK

data sheetDownload Data Sheet

Docket:
New Product
SiA850DJ
Vishay Siliconix
N-Channel 190-V (D-S) MOSFET with 190-V Diode
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 470 mA
  • Drain Source Voltage Vds: 190 V
  • Number of Pins: 6
  • On State Resistance: 3 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 1.9 W
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Transistor Case Style: PowerPAK SC70
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 16 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL
  • Electrolube - SMA10SL

Other Names:

SIA850DJT1GE3, SIA850DJ T1 GE3

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