Datasheet SIHG16N50C-E3 - Vishay MOSFET, N CH, DIODE, 500 V, 16 A, TO-247AC

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 500 V, 16 A, TO-247AC

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Docket:
SiHG16N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.

RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 68 17.6 21.8 Single

Specifications:

• Current Id Max: 16 A
• Drain Source Voltage Vds: 500 V
• Number of Pins: 3
• On State Resistance: 0.317 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 250 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-247AC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• MULTICORE (SOLDER) - 1399075-M

Other Names:

SIHG16N50CE3, SIHG16N50C E3