Datasheet SQD30N05-20L -GE3 - Vishay MOSFET, N CH, W DIODE, 55 V, 30 A, TO-252

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 55 V, 30 A, TO-252

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Docket:
SPICE Device Model SQD30N05-20L
Vishay Siliconix
N-Channel 55 V (D-S) 175 °C MOSFET
DESCRIPTION
The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS.

The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

Specifications:

• Continuous Drain Current Id: 30 A
• Drain Source Voltage Vds: 55 V
• Number of Pins: 3
• On State Resistance: 0.016 Ohm
• Operating Temperature Range: -55°C to +175°C
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-252
• Transistor Polarity: N Channel
• Voltage Vgs Max: 5 V

RoHS: Yes

Other Names:

SQD30N0520L GE3, SQD30N05 20L GE3