Part Number: SQD30N05-20L -GE3
Description: MOSFET, N CH, W DIODE, 55 V, 30 A, TO-252
SPICE Device Model SQD30N05-20L
N-Channel 55 V (D-S) 175 °C MOSFET
The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS.
The subcircuit model is extracted and optimized over the - 55 °C to + 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
SQD30N0520L GE3, SQD30N05 20L GE3