Datasheet SQD40N10-25-GE3 - Vishay MOSFET, N CH, W DIODE, 100 V, 40 A, TO-252
Part Number: SQD40N10-25-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 100 V, 40 A, TO-252
Docket:
SQD40N10-25
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 100 0.025 0.029 40 Single
Specifications:
- Continuous Drain Current Id: 40 A
- Drain Source Voltage Vds: 100 V
- Number of Pins: 3
- On State Resistance: 0.019 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 136 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: TO-252
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Other Names:
SQD40N1025GE3, SQD40N10 25 GE3