Datasheet SQD40N10-25-GE3 - Vishay MOSFET, N CH, W DIODE, 100 V, 40 A, TO-252

Vishay SQD40N10-25-GE3

Part Number: SQD40N10-25-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 100 V, 40 A, TO-252

data sheetDownload Data Sheet

Docket:
SQD40N10-25
Vishay Siliconix
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 100 0.025 0.029 40 Single

Specifications:

  • Continuous Drain Current Id: 40 A
  • Drain Source Voltage Vds: 100 V
  • Number of Pins: 3
  • On State Resistance: 0.019 Ohm
  • Operating Temperature Range: -55°C to +175°C
  • Power Dissipation Pd: 136 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Transistor Case Style: TO-252
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 20 V

RoHS: Yes

Other Names:

SQD40N1025GE3, SQD40N10 25 GE3

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