Datasheet SI3458BDV-T1-GE3 - Vishay N CH MOSFET
Part Number: SI3458BDV-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: N CH MOSFET
Specifications:
- Continuous Drain Current Id: 3.2 A
- Drain Source Voltage Vds: 60 V
- On Resistance Rds(on): 82 MOhm
- Power Dissipation Pd: 2 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Polarity: N Channel
RoHS: Yes
Other Names:
SI3458BDVT1GE3, SI3458BDV T1 GE3
