Datasheet SI7186DP-T1-E3 - Vishay MOSFET, N, PPAK, SO-8

Vishay SI7186DP-T1-E3

Part Number: SI7186DP-T1-E3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, PPAK, SO-8

data sheetDownload Data Sheet

Docket:
Si7186DP
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 80 RDS(on) () 0.0125 at VGS = 10 V ID (A)a 32g Qg (Typ.) 46 nC

Specifications:

  • Continuous Drain Current Id: 32 A
  • Current Id Max: 14.5 A
  • Drain Source Voltage Vds: 80 V
  • Junction Temperature Tj Max: 150°C
  • Mounting Type: SMD
  • On Resistance Rds(on): 12.5 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: PowerPAK
  • Power Dissipation Pd: 64 W
  • Rds(on) Test Voltage Vgs: 10 V
  • Rise Time: 11 ns
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 80 V
  • Voltage Vgs Max: 20 V
  • Voltage Vgs Rds on Measurement: 10 V
  • Voltage Vgs th Max: 4.5 V
  • Voltage Vgs th Min: 2.5 V

RoHS: Yes

Accessories:

  • Panasonic - EYGA091203SM
  • Panasonic - EYGA121807A

Other Names:

SI7186DPT1E3, SI7186DP T1 E3

EMS supplier