Datasheet BSS8402DW-7-F - Diodes MOSFET, NP, CH, 60 V, SOT-363

Detailed Description

Manufacturer: Diodes

Description: MOSFET, NP, CH, 60 V, SOT-363

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Docket:
BSS8402DW
COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
· · · · · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) Qualified to AEC-Q101 Standards for High Reliability

Specifications:

• Continuous Drain Current Id, N Channel: 115 mA
• Continuous Drain Current Id, P Channel: -130 mA
• Continuous Drain Current Id: 115 mA
• Current Id Max: 800 mA
• Drain Source Voltage Vds, N Channel: 60 V
• Drain Source Voltage Vds, P Channel: -50 V
• Drain Source Voltage Vds: 60 V
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on), N Channel: 3.2 Ohm
• On Resistance Rds(on), P Channel: 10 Ohm
• On Resistance Rds(on): 13.5 Ohm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-363
• Power Dissipation: 200 mW
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Case Style: SOT-363
• Transistor Polarity: N and P Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 60 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

BSS8402DW7F, BSS8402DW 7 F