Datasheet NDS9953A - Fairchild MOSFET, DUAL, PP, LOGIC, SO-8

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, DUAL, PP, LOGIC, SO-8

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Docket:
February 1996
NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Continuous Drain Current Id: 2.9 A
• Current Id Max: 3.7 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 200 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Pin Configuration: c
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: -10 V
• Row Pitch: 6.3 mm
• SMD Marking: NDS9953A
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -1.6 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -20 V
• Voltage Vgs Rds on Measurement: -10 V

RoHS: Yes