Datasheet SI4500BDY - Vishay MOSFET, DUAL, NP, LOGIC, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, DUAL, NP, LOGIC, SO-8

Download Data Sheet

Simulation Model

Specifications:

• Cont Current Id P Channel: 3.8 A
• Continuous Drain Current Id: 9.1 A
• Current Id Max: 6.6 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• N-channel Gate Charge: 11nC
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 20 MOhm
• On State Resistance @ Vgs = 2.5V N Channel: 30 MOhm
• On State Resistance @ Vgs = 2.5V P Channel: 60 MOhm
• On State Resistance @ Vgs = 4.5V N Channel: 20 MOhm
• On State Resistance @ Vgs = 4.5V P Channel: 100 MOhm
• On State Resistance N Channel Max: 20 MOhm
• On State Resistance P Channel Max: 48 MOhm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 6nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.3 W
• Pulse Current Idm: 30 A
• Rds(on) Test Voltage Vgs: 4.5 V
• SMD Marking: SI4500BDY
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOIC
• Transistor Polarity: N and P Channel
• Voltage Vds N Channel 1: 20 V
• Voltage Vds P Channel 1: 20 V
• Voltage Vds P Channel Max: 20 V
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 12 V

RoHS: Yes