Datasheet 2N7000 (Microchip)
| Manufacturer | Microchip |
| Description | N-Channel Enhancement-Mode Vertical DMOS FET |
| Pages / Page | 5 / 1 — Supertex inc. 2N7000. N-Channel Enhancement-Mode. Vertical DMOS FETs. … |
| Revision | 09-10-2008 |
| File Format / Size | PDF / 645 Kb |
| Document Language | English |
Supertex inc. 2N7000. N-Channel Enhancement-Mode. Vertical DMOS FETs. Features. General Description. Applications
Model Line for this Datasheet
Text Version of Document
Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description
► Free from secondary breakdown The Supertex 2N7000 is an enhancement-mode (normally- ► Low power drive requirement off) transistor that utilizes a vertical DMOS structure and ► Ease of paralleling Supertex’s well-proven silicon-gate manufacturing process. ► Low C and fast switching speeds This combination produces a device with the power handling ISS ► Excellent thermal stability capabilities of bipolar transistors, and the high input impedance ► Integral source-drain diode and positive temperature coefficient inherent in MOS devices. ► High input impedance and high gain Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Applications
► Motor controls Supertex’s vertical DMOS FETs are ideally suited to a wide ► Converters range of switching and amplifying applications where very ► Amplifiers low threshold voltage, high breakdown voltage, high input ► Switches impedance, low input capacitance, and fast switching speeds are desired. ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information Product Summary Part Number Package Option Packing BV /BV R I DS(ON) D(ON)
2N7000-G TO-92 1000/Bag
DSX DGS (max) (min)
2N7000-G P002 TO-92 2000/Reel 60V 5.0Ω 75mA 2N7000-G P003 TO-92 2000/Reel
Pin Configuration
2N7000-G P005 TO-92 2000/Reel 2N7000-G P013 TO-92 2000/Reel 2N7000-G PO14 TO-92 2000/Reel
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity.
SOURCE
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
GATE Absolute Maximum Ratings TO-92 Parameter Value Product Marking
Drain-to-Source voltage BV DSS
S i 2 N
Drain-to-Gate voltage BV YY = Year Sealed DGS
7 0 0 0
WW = Week Sealed Gate-to-Source voltage ±30V
Y Y W W
= “Green” Packaging Operating and storage temperature -55°C to +150°C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device
TO-92
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Typical Thermal Characteristics Package θja
TO-92 132OC/W * Mounted on FR4 board; 25mm x 25mm x 1.57mm Doc.# DSFP-2N7000
Supertex inc.
C062813
www.supertex.com
► Free from secondary breakdown The Supertex 2N7000 is an enhancement-mode (normally- ► Low power drive requirement off) transistor that utilizes a vertical DMOS structure and ► Ease of paralleling Supertex’s well-proven silicon-gate manufacturing process. ► Low C and fast switching speeds This combination produces a device with the power handling ISS ► Excellent thermal stability capabilities of bipolar transistors, and the high input impedance ► Integral source-drain diode and positive temperature coefficient inherent in MOS devices. ► High input impedance and high gain Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Applications
► Motor controls Supertex’s vertical DMOS FETs are ideally suited to a wide ► Converters range of switching and amplifying applications where very ► Amplifiers low threshold voltage, high breakdown voltage, high input ► Switches impedance, low input capacitance, and fast switching speeds are desired. ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)
Ordering Information Product Summary Part Number Package Option Packing BV /BV R I DS(ON) D(ON)
2N7000-G TO-92 1000/Bag
DSX DGS (max) (min)
2N7000-G P002 TO-92 2000/Reel 60V 5.0Ω 75mA 2N7000-G P003 TO-92 2000/Reel
Pin Configuration
2N7000-G P005 TO-92 2000/Reel 2N7000-G P013 TO-92 2000/Reel 2N7000-G PO14 TO-92 2000/Reel
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity.
SOURCE
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
GATE Absolute Maximum Ratings TO-92 Parameter Value Product Marking
Drain-to-Source voltage BV DSS
S i 2 N
Drain-to-Gate voltage BV YY = Year Sealed DGS
7 0 0 0
WW = Week Sealed Gate-to-Source voltage ±30V
Y Y W W
= “Green” Packaging Operating and storage temperature -55°C to +150°C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device
TO-92
may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.
Typical Thermal Characteristics Package θja
TO-92 132OC/W * Mounted on FR4 board; 25mm x 25mm x 1.57mm Doc.# DSFP-2N7000
Supertex inc.
C062813
www.supertex.com
