Datasheet Si4490DY (Vishay) - 3
| Manufacturer | Vishay |
| Description | N-Channel 200-V (D-S) MOSFET |
| Pages / Page | 7 / 3 — Si4490DY. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain Current. … |
| File Format / Size | PDF / 166 Kb |
| Document Language | English |
Si4490DY. TYPICAL CHARACTERISTICS. On-Resistance vs. Drain Current. Capacitance. Gate Charge
Model Line for this Datasheet
Text Version of Document
Si4490DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.20 2500 ) 2000 Ω 0.15 Ciss 1500 0.10 VGS = 6 V - On-Resistance ( 1000 - Capacitance (pF) VGS = 10 V C DS(on)R 0.05 500 Crss Coss 0.00 0 0 8 16 24 32 40 0 40 80 120 160 200 I V D - Drain Current (A) DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
20 2.5 VDS = 100 V VGS = 10 V ID = 4.0 A ID = 4.0 A 16 2.0 Voltage (V) 12 1.5 ed) maliz - On-Resistance 8 1.0 (Nor - Gate-to-Source DS(on)R GS 4 V 0.5 0 0.0 0 15 30 45 60 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
50 0.25 0.20 ID = 4.0 A TJ = 150 °C 10 0.15 - 0.10 - Source Current (A) I S TJ = 25 °C DS(on)R 0.05 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Document Number: 71341 www.vishay.com S09-0705-Rev. C, 27-Apr-09 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 0.20 2500 ) 2000 Ω 0.15 Ciss 1500 0.10 VGS = 6 V - On-Resistance ( 1000 - Capacitance (pF) VGS = 10 V C DS(on)R 0.05 500 Crss Coss 0.00 0 0 8 16 24 32 40 0 40 80 120 160 200 I V D - Drain Current (A) DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
20 2.5 VDS = 100 V VGS = 10 V ID = 4.0 A ID = 4.0 A 16 2.0 Voltage (V) 12 1.5 ed) maliz - On-Resistance 8 1.0 (Nor - Gate-to-Source DS(on)R GS 4 V 0.5 0 0.0 0 15 30 45 60 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
50 0.25 0.20 ID = 4.0 A TJ = 150 °C 10 0.15 - 0.10 - Source Current (A) I S TJ = 25 °C DS(on)R 0.05 1 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Document Number: 71341 www.vishay.com S09-0705-Rev. C, 27-Apr-09 3
