Datasheet AD8574-EP (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Zero-Drift, Single-Supply, RRIO Quad Op Amp |
| Pages / Page | 16 / 3 — AD8574-EP. SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS. Table 1. … |
| Revision | A |
| File Format / Size | PDF / 241 Kb |
| Document Language | English |
AD8574-EP. SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
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AD8574
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AD8574-EP SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V 1 5 μV OS −55°C ≤ T ≤ +125°C 15 μV A Input Bias Current I 10 50 pA B −55°C ≤ T ≤ +125°C 1.0 1.5 nA A Input Offset Current I 20 70 pA OS −55°C ≤ T ≤ +125°C 150 200 pA A Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR V = 0 V to 5 V 120 140 dB CM −55°C ≤ T ≤ +125°C 115 130 dB A Large Signal Voltage Gain1 A R = 10 kΩ, V = 0.3 V to 4.7 V 125 145 dB VO L O −55°C ≤ T ≤ +125°C 120 135 dB A Offset Voltage Drift ∆V /∆T −55°C ≤ T ≤ +125°C 0.005 0.04 μV/°C OS A OUTPUT CHARACTERISTICS Output Voltage High V R = 100 kΩ to GND 4.99 4.998 V OH L R = 100 kΩ to GND @ −55°C to +125°C 4.99 4.997 V L R = 10 kΩ to GND 4.95 4.98 V L R = 10 kΩ to GND @ −55°C to +125°C 4.95 4.975 V L Output Voltage Low V R = 100 kΩ to V+ 1 10 mV OL L R = 100 kΩ to V+ @ −55°C to +125°C 2 10 mV L R = 10 kΩ to V+ 10 30 mV L R = 10 kΩ to V+ @ −55°C to +125°C 15 30 mV L Short-Circuit Limit I ±25 ±50 mA SC −55°C to +125°C ±40 mA Output Current I ±30 mA O −55°C to +125°C ±15 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 5.5 V 120 130 dB S −55°C ≤ T ≤ +125°C 115 130 dB A Supply Current per Amplifier I V = 0 V 850 975 μA SY O −55°C ≤ T ≤ +125°C 1000 1075 μA A DYNAMIC PERFORMANCE Slew Rate SR R = 10 kΩ 0.4 V/μs L Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz NOISE PERFORMANCE Voltage Noise e p-p 0 Hz to 10 Hz 1.3 μV p-p n 0 Hz to 1 Hz 0.41 μV p-p Voltage Noise Density e f = 1 kHz 51 nV/√Hz n Current Noise Density i f = 10 Hz 2 fA/√Hz n 1 Gain testing is dependent upon test bandwidth. Rev. 0 | Page 3 of 16 Document Outline Features Applications General Description Pin Configurations Revision History Specifications 5 V Electrical Characteristics 2.7 V Electrical Characteristics Absolute Maximum Ratings Thermal Characteristics ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide
AD8574-EP SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V 1 5 μV OS −55°C ≤ T ≤ +125°C 15 μV A Input Bias Current I 10 50 pA B −55°C ≤ T ≤ +125°C 1.0 1.5 nA A Input Offset Current I 20 70 pA OS −55°C ≤ T ≤ +125°C 150 200 pA A Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR V = 0 V to 5 V 120 140 dB CM −55°C ≤ T ≤ +125°C 115 130 dB A Large Signal Voltage Gain1 A R = 10 kΩ, V = 0.3 V to 4.7 V 125 145 dB VO L O −55°C ≤ T ≤ +125°C 120 135 dB A Offset Voltage Drift ∆V /∆T −55°C ≤ T ≤ +125°C 0.005 0.04 μV/°C OS A OUTPUT CHARACTERISTICS Output Voltage High V R = 100 kΩ to GND 4.99 4.998 V OH L R = 100 kΩ to GND @ −55°C to +125°C 4.99 4.997 V L R = 10 kΩ to GND 4.95 4.98 V L R = 10 kΩ to GND @ −55°C to +125°C 4.95 4.975 V L Output Voltage Low V R = 100 kΩ to V+ 1 10 mV OL L R = 100 kΩ to V+ @ −55°C to +125°C 2 10 mV L R = 10 kΩ to V+ 10 30 mV L R = 10 kΩ to V+ @ −55°C to +125°C 15 30 mV L Short-Circuit Limit I ±25 ±50 mA SC −55°C to +125°C ±40 mA Output Current I ±30 mA O −55°C to +125°C ±15 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 5.5 V 120 130 dB S −55°C ≤ T ≤ +125°C 115 130 dB A Supply Current per Amplifier I V = 0 V 850 975 μA SY O −55°C ≤ T ≤ +125°C 1000 1075 μA A DYNAMIC PERFORMANCE Slew Rate SR R = 10 kΩ 0.4 V/μs L Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz NOISE PERFORMANCE Voltage Noise e p-p 0 Hz to 10 Hz 1.3 μV p-p n 0 Hz to 1 Hz 0.41 μV p-p Voltage Noise Density e f = 1 kHz 51 nV/√Hz n Current Noise Density i f = 10 Hz 2 fA/√Hz n 1 Gain testing is dependent upon test bandwidth. Rev. 0 | Page 3 of 16 Document Outline Features Applications General Description Pin Configurations Revision History Specifications 5 V Electrical Characteristics 2.7 V Electrical Characteristics Absolute Maximum Ratings Thermal Characteristics ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide
