Datasheet AD8574-EP (Analog Devices) - 4

ManufacturerAnalog Devices
DescriptionZero-Drift, Single-Supply, RRIO Quad Op Amp
Pages / Page16 / 4 — AD8574-EP. 2.7 V ELECTRICAL CHARACTERISTICS. Table 2. Parameter. Symbol. …
RevisionA
File Format / SizePDF / 241 Kb
Document LanguageEnglish

AD8574-EP. 2.7 V ELECTRICAL CHARACTERISTICS. Table 2. Parameter. Symbol. Conditions. Min. Typ. Max. Unit

AD8574-EP 2.7 V ELECTRICAL CHARACTERISTICS Table 2 Parameter Symbol Conditions Min Typ Max Unit

Model Line for this Datasheet

Text Version of Document

link to page 4
AD8574-EP 2.7 V ELECTRICAL CHARACTERISTICS
VS = 2.7 V, VCM = 1.35 V, VO = 1.35 V, TA = 25°C, unless otherwise noted.
Table 2. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V 1 5 μV OS −55°C ≤ T ≤ +125°C 15 μV A Input Bias Current I 10 50 pA B −55°C ≤ T ≤ +125°C 1.0 1.5 nA A Input Offset Current I 10 50 pA OS −55°C ≤ T ≤ +125°C 150 200 pA A Input Voltage Range 0 2.7 V Common-Mode Rejection Ratio CMRR V = 0 V to 2.7 V 115 130 dB CM −55°C ≤ T ≤ +125°C 110 130 dB A Large Signal Voltage Gain1 A R = 10 kΩ, V = 0.3 V to 2.4 V 110 140 dB VO L O −55°C ≤ T ≤ +125°C 105 130 dB A Offset Voltage Drift ∆V /∆T −55°C ≤ T ≤ +125°C 0.005 0.04 µV/°C OS A OUTPUT CHARACTERISTICS Output Voltage High V R = 100 kΩ to GND 2.685 2.697 V OH L R = 100 kΩ to GND @ −55°C to +125°C 2.685 2.696 V L R = 10 kΩ to GND 2.67 2.68 V L R = 10 kΩ to GND @ −55°C to +125°C 2.67 2.675 V L Output Voltage Low V R = 100 kΩ to V+ 1 10 mV OL L R = 100 kΩ to V+ @ −55°C to +125°C 2 10 mV L R = 10 kΩ to V+ 10 20 mV L R = 10 kΩ to V+ @ −55°C to +125°C 15 20 mV L Short-Circuit Limit I ±10 ±15 mA SC −55°C to +125°C ±10 mA Output Current I ±10 mA O −55°C to +125°C ±5 mA POWER SUPPLY Power Supply Rejection Ratio PSRR V = 2.7 V to 5.5 V 120 130 dB S −55°C ≤ T ≤ +125°C 115 130 dB A Supply Current per Amplifier I V = 0 V 750 900 μA SY O −55°C ≤ T ≤ +125°C 950 1000 μA A DYNAMIC PERFORMANCE Slew Rate SR R = 10 kΩ 0.5 V/μs L Overload Recovery Time 0.05 ms Gain Bandwidth Product GBP 1 MHz NOISE PERFORMANCE Voltage Noise e p-p 0 Hz to 10 Hz 2.0 μV p-p n Voltage Noise Density e f = 1 kHz 94 nV/√Hz n Current Noise Density i f = 10 Hz 2 fA/√Hz n 1 Gain testing is dependent upon test bandwidth. Rev. 0 | Page 4 of 16 Document Outline Features Applications General Description Pin Configurations Revision History Specifications 5 V Electrical Characteristics 2.7 V Electrical Characteristics Absolute Maximum Ratings Thermal Characteristics ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide
EMS supplier